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Charles, N. A.
Department of Electrical/Electronics Engineering, Michael Okpara University of Agriculture Umudike, Nigeria
Agwu, O. E.
Department of Electrical/Electronics Engineering, Michael Okpara University of Agriculture Umudike, Nigeria
ABSTRACT
This paper proposes C-band MMIC (monolithic microwave integrated circuit) non-Foster circuit (NFC) Class-J GaN HEMT (gallium nitride high electron mobility transistor) power amplifier (PA). The non-Foster circuit cancels the power transistor input parasitic capacitance, improves PA performance and sustains the bandwidth. The PA and NFC were designed based on WIN Semiconductor’s GaN HEMTs with device periphery of 150 μm each. The NFC GaN HEMTs were biased with drain supply voltage 10 V at quiescent-drainto-source current of 9mA. The PA was biased with drain supply voltage of 15 V at quiescentdrain-to-source current of 11 mA. The PA operates from 4.8 to 5.2 GHz with center frequency of 5 GHz. The NFC has a negative reactance to frequency slope across the 400 MHz bandwidth. The effective capacitance of the NFC from 4.8 to 5.2 GHz stands at -2.15 to -2.85 pF. The effective capacitance at 5 GHz is -2.4 pF. The proposed PA has output power capability of 23.2 dBm.
Keywords: MMIC, C-band, non-Foster circuit, GaN HEMT, power amplifier.
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Conference Code
IECON2019
Conference Title
ENGINEERING FOR SUSTAINABLE ECONOMIC DIVERSIFICATION, FOOD AND NATIONAL SECURITY
ISBN
978-978-53175-8-9
Date Published
Friday, September 20, 2019
Conference Date
2nd - 4th September, 2019
The contents of the articles are the sole opinion of the author(s) and not of UJET.
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