Umudike Journal of Engineering and Technology

Michael Okpara University of Agriculture, Umudike


GRAPHENE HIGH EFFICIENCY GAAS PHEMT DOHERTY POWER AMPLIFIER FOR 6-7 GHZ WIRELESS APPLICATIONS
Akwuruoha, C. N.
Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture, Umudike, Nigeria



ABSTRACT

This paper proposes Graphene high efficiency Gallium Arsenide pseudomorphic high electron mobility transistor (GaAs pHEMT) Doherty Power Amplifier for 6-7 GHz wireless applications. The power amplifier (PA) was designed based on 150 µm WIN Semiconductor P10-10 GaAs pHEMT device biased with drain supply voltage of 2 V at quiescent drain-to-source current (IDSq) of 16mA. The design and simulation were carried out using Keysight’s Advanced Design System (ADS) software. The gate-source voltage of the transistors in the main and peaking amplifiers stand at -0.6 V and -1 V respectively. The PA operates in the C-band frequency range of 6 to 7 GHz with center frequency of 6.5 GHz. The PA has 60.5% drain efficiency,48.6% power added efficiency (PAE),14.2 dBm output power,4.2 dB transducer power gain and12.3 dB small signal gain at 6.5 GHz and10 dBm input power.


Keywords: Doherty, power amplifier, graphene, GaAs pHEMT, high efficiency


https://doi.org/10.33922/j.ujet_v10i1_4
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Published
Tuesday, April 23, 2024
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Vol. 10 No. 1, June 2024
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