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Akwuruoha, C. N.
Department of Electrical/Electronic Engineering, College of Engineering and Engineering Technology, Michael Okpara University of Agriculture, Umudike. Abia State, Nigeria
ABSTRACT
This paper presents an analysis of S-parameters and cut-off frequency of monolithic microwave integrated circuit (MMIC) gallium Arsenide pseudomorphic high electron mobility transistor (GaAs pHEMT) at different drain supply voltages from 1 to 50 GHz. The Fabricated and Modeled WIN Semiconductor P10-10 process 4 x 50 µm MMIC GaAs pHEMT transistor device was measured and simulated at different drain supply voltages of 1.8V, 2.7V and 3.6V and gate voltage of -0.8V and compared at 25 GHz. The S-parameter measurement was carried out with vector network analyzer (VNA) while the simulation was done with keysight Advanced Design System (ADS) Software. At drain supply voltage of 1.8V, the measurement result shows S11 of -1.3 dB, S22 of -3.2 dB, S12 of -12.7dB and S21 of 4 dB while the simulation result shows S11 of -1.7 dB, S22 of –2.4 dB, S12 of -13.4 dB and S21 of 3.4 dB. At drain supply voltage of 2.7V, the measurement results show S11 of -1.5 dB, S22 of -4.3 dB, S12 of -14.3 dB and S21 of 6.3 dB while the simulation result shows S11 of -2 dB, S22 of -3.1 dB, S12 of -14.1 dB and S21 of 5 dB. At drain supply voltage of 3.6V, the measurement result shows S11 of -1.6 dB, S22 of -4.9 dB, S12 of -15.6 dB and S21 of 7.6 dB while the simulation result shows S11 of -1.6 dB, S22 of -3.8 dB, S12 of -14.7 dB and S21 of 6 dB.
Keywords: GaAs pHEMT; P10-10 process; S-parameter; drain supply voltage; cut-off frequency.
https://doi.org/10.33922/j.ujet_v10i1_6
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Published
Tuesday, April 23, 2024
Issue
Vol. 10 No. 1, June 2024
Article Section
GENERAL
The contents of the articles are the sole opinion of the author(s) and not of UJET.
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