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Akwuruoha, C. N.
Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture Umudike, Nigeria
Agwu, O. E.
Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture Umudike, Nigeria
Amadi, C. C.
Department of Computer Engineering, Michael Okpara University of Agriculture Umudike, Nigeria
ABSTRACT
This paper investigates effect of non-Foster
matching on the performance of Class B and Class-J GaN HEMT (Gallium Nitride
High Electron Mobility Transistor) power amplifiers. The performance of Class B
and Class-J Power Amplifiers (Pas) with and without Non-Foster Circuit (NFC) in
terms of efficiency, output power and power gain are investigated and compared.
The PAs were designed based on Cree’s CGHV40030F GaN HEMT. The Class B PA was
biased at cut-off (drain supply voltage of 40 V and gate voltage of -3.2 V at
quiescent drain-to-source current of 0 A. The Class-J PA was biased with drain
supply voltage of 40 V at quiescent drain-to-source current (IDSq) of 35 mA.
The PAs operate from 4.15 to 4.55 GHz with center frequency of 4.35 GHz. The
NFC has effective negative capacitance of -0.96 pF at 4.35 GHz center
frequency. Simulation results indicates
that at input power of 32 dBm, Class B PA with NFC has 46 % drain efficiency,
41.6 % PAE, 42.1 dBm (16.2 W) output power and 10.1 dB transducer power gain
whereas the Class B PA without NFC has 33.4% drain efficiency, 29.9% PAE, 38.9
dBm (7.8 W) output power and 6.9 dB transducer power. Class-J PA with NFC has
45.4% drain efficiency, 42.5% PAE, 42.5 dBm (17.8 W) output power and power
gain of 10.5 dB whereas Class-J PA without NFC has 38.6% drain efficiency,
33.6% PAE, 40.4 dBm (11 W) output power and power gain of 8.4 dB.
Keywords: Class J, Class B, non-Foster, negative capacitance, parasitic capacitance, power amplifier
https://doi.org/10.33922/j.ujet_v7i2_2
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Published
Tuesday, February 15, 2022
Issue
Vol. 7 No. 2, Dec. 2021
Article Section
GENERAL
The contents of the articles are the sole opinion of the author(s) and not of UJET.
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